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MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
CM300DU-12F
IC ................................................................... 300A VCES ............................................................ 600V Insulated Type 2-elements in a pack
APPLICATION General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 93 0.25 14 14
Tc measured point
14
RTC
E2 G2
6
(8.25)
C2E1
E2
RTC
C1
48 0.25
CM
G1 E1
6
(18)
CIRCUIT DIAGRAM
C2E1
E2
C1
25 3-M6 NUTS 4-6. 5 MOUNTING HOLES
25
21.5
2.5
4 18 7 18 7 18 2.8 0.5
15.85
0.5
0.5 0.5
7.5
29 +1.0 -0.5
22
LABEL
8.5
Feb. 2009
4
G1 E1
15
62
E2 G2
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25C, unless otherwise specified)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 300 600 300 600 780 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W C C Vrms N*m N*m g
(Note 2) (Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VGES, VCE = 0V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE = 15V RG = 2.1, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 Limits Typ. -- 6 -- 1.6 1.6 -- -- -- 1860 -- -- -- -- -- 5.2 -- -- -- 0.04 -- -- Max. 1 7 40 2.2 -- 81 5.4 3.0 -- 250 120 500 250 150 -- 2.6 0.16 0.24 -- 0.10*3 21 Unit mA V A V
nF nC
ns ns C V
Contact thermal resistance Thermal resistance External gate resistance
K/W
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009 2
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
600
COLLECTOR CURRENT IC (A)
Tj=25C 500 400 300 VGE=20V
15 11 10 9.5 9
3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 200 400 600
8.5 200 100 0 8 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
7
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
Tj = 25C
Tj = 25C
4
EMITTER CURRENT IE (A)
5 3 2
3 IC = 600A IC = 300A IC = 120A
102
7 5 3 2
2
1
0
6
8
10
12
14
16
18
20
101
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 3 2
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
Cies
td(off) td(on) tf
SWITCHING TIMES (ns)
101
7 5 3 2
102
7 5 3 2
Coes Cres
tr
100
7 5 3 2
101
7 5 3 2
VGE = 0V
Conditions: VCC = 300V VGE = 15V RG = 2.1 Tj = 125C
10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A)
Feb. 2009 3
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.16K/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.24K/W 100
7 5 3 2 7 5 3 2 7 5 3 2 3 2
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
103
3 2
102
7 5 3 2
trr Irr
Conditions: VCC = 300V VGE = 15V RG = 2.1 Tj = 25C 2 3 5 7 102 2 3 5 7 103
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c)
7 5
10-1
10-1
7 5 3 2 7 5 3 2
10-2
10-2 Single Pulse TC = 25C
101 1 10
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
18 16 14 12 10 8 6 4 2 0 0
IC = 300A VCC = 200V VCC = 300V
500
1000
1500
2000
2500
GATE CHARGE QG (nC)
Feb. 2009 4

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